A 41-GHz 19.4-dBm P<sub>sat</sub> CMOS Doherty power amplifier for 5G NR applications
نویسندگان
چکیده
In this letter, a 41-GHz Doherty power amplifier (PA) in standard 65nm CMOS technology is introduced for 5G New Radio (NR) applications. The proposed PA implements the transformer-based parallel-combined structure to enhance power-added efficiency (PAE). A tunable 90-deg hybrid coupler output phase compensation. This work achieves saturated (Psat) of 19.4dBm and an OP1dB 18.6dBm at 41.5GHz under 1-V supply. peak PAE 6-dB back-off (PBO) are 30.4% 19.2%, respectively. also supports single-carrier mode (SC-mode) 400-MSymbols/s 256QAM OFDMA-mode 400-MHz 256QAM. core chip area 0.22 mm2 with static consumption 76mW.
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2023
ISSN: ['1349-2543', '1349-9467']
DOI: https://doi.org/10.1587/elex.20.20220558